Method for fabricating liquid crystal display device

Details Method for fabricating liquid crystal display device Method for fabricating liquid crystal display device

2009-02-06

2009-10-20

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257SE29147, C257SE29151, C257SE29273

Reexamination Certificate

active

07605400

ABSTRACT:
A thin film transistor including: an active layer on a substrate, the active layer having at least two unit channels; and source and drain electrodes on the active layer, wherein an interval D between each of the channels is larger than a unit channel width W.

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Inoue, et al., “Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors”,The Japan Society of Applied Physics, 41(11A), pp. 6313-6319, (Nov. 2002).

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