Method for fabricating lightly doped drain metal oxide semicondu

Details Method for fabricating lightly doped drain metal oxide semicondu Method for fabricating lightly doped drain metal oxide semicondu

1996-03-12

1997-12-16

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 27, 437 41, H01L 21335

Patent

active

056984618

ABSTRACT:
A lightly doped drain (LDD) metal oxide semiconductor field effect transistor (MOSFET). Field oxide is used as a hard mask for a total-overlap polysilicon (TOP) gate which minimizes hot-carrier degradation, so that a soft-mask step is saved. The field oxide is used also as a hard mask for surface counter-doping which reduces gate-induced drain leakage, and in making a punch-through stop which reduces drain-induced barrier low and short channel effect.

REFERENCES:
patent: 5175119 (1992-12-01), Matsutani
patent: 5374574 (1994-12-01), Kwon
patent: 5374575 (1994-12-01), Kim et al.
patent: 5472897 (1995-12-01), Hsu et al.
patent: 5484743 (1996-01-01), Ko et al.
patent: 5538913 (1996-07-01), Hong

Affiliated with

Also associated with

Rating

Method for fabricating lightly doped drain metal oxide semicondu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating lightly doped drain metal oxide semicondu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating lightly doped drain metal oxide semicondu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-205406