Method for fabricating light emitting diodes

Details Method for fabricating light emitting diodes Method for fabricating light emitting diodes

2008-01-29

2010-06-01

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

C438S022000, C438S026000, C438S034000, C438S458000, C438S481000, C257SE21121

Reexamination Certificate

active

07727790

ABSTRACT:
The invention is method for fabricating light emitting diodes. A layered semiconductor structure is provided on a growth substrate. The method includes using a pulsed laser to form an interfacial layer between the layered semiconductor structure and the growth substrate for subsequent substrate detachment and to simultaneously form light extracting elements on the layered semiconductor structure. The method reduces the number of steps required to fabricate a light emitting diode.

REFERENCES:
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6559075 (2003-05-01), Kelly et al.
patent: 6751380 (2004-06-01), Imamura et al.
patent: 7202141 (2007-04-01), Park et al.
patent: 7241667 (2007-07-01), Park et al.

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