Method for fabricating light emitting diode element

Details Method for fabricating light emitting diode element Method for fabricating light emitting diode element

2007-12-21

2009-08-25

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

C438S034000, C438S041000, C438S751000, C438S945000, C257SE21306, C257SE21034, C257SE21117

Reexamination Certificate

active

07579202

ABSTRACT:
The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.

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patent: 2008/0014723 (2008-01-01), Shibata

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