Method for fabricating light emitting diode chip

Details Method for fabricating light emitting diode chip Method for fabricating light emitting diode chip

2009-03-04

2011-10-25

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C257SE31099

Reexamination Certificate

active

08043873

ABSTRACT:
A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

REFERENCES:
patent: 7728340 (2010-06-01), Unno et al.
patent: 7816703 (2010-10-01), Chen et al.
patent: 2006/0121634 (2006-06-01), Ahn
patent: 2009/0114940 (2009-05-01), Yang et al.
patent: 2009/0152583 (2009-06-01), Chen et al.
patent: 2010/0012970 (2010-01-01), Fang et al.
patent: 2010/0015742 (2010-01-01), Fang et al.
patent: 2010/0059768 (2010-03-01), Hasnain

Affiliated with

Also associated with

Rating

Method for fabricating light emitting diode chip does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating light emitting diode chip, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating light emitting diode chip will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4269614