Method for fabricating light emitting device

Details Method for fabricating light emitting device Method for fabricating light emitting device

2010-02-25

2011-10-18

Hoang, Quoc (Department: 2892)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21570

Reexamination Certificate

active

08039362

ABSTRACT:
Provided is a method for fabricating a light emitting device. The method comprises forming a gallium oxide layer, forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer, forming a conductive substrate on the second conductive type semiconductor layer, separating the gallium oxide layer, and forming a first electrode on the first conductive type semiconductor layer.

REFERENCES:
patent: 7524692 (2009-04-01), Park et al.
patent: 2005/0110037 (2005-05-01), Takeda et al.
patent: 2006/0194360 (2006-08-01), Takeuchi et al.
patent: 2006/0246614 (2006-11-01), Suh
patent: 2006/0286777 (2006-12-01), Lee et al.
patent: 2008/0042244 (2008-02-01), Anzue et al.
patent: 2009/0212278 (2009-08-01), Jorgenson et al.
patent: 2010/0264442 (2010-10-01), Lee
patent: 2005-175462 (2005-06-01), None
patent: 10-0730537 (2005-12-01), None
patent: 10-2007-0089764 (2007-09-01), None

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