Method for fabricating LED chip comprising reduced mask...

Details Method for fabricating LED chip comprising reduced mask... Method for fabricating LED chip comprising reduced mask...

2011-04-19

2011-04-19

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S670000, C438S951000, C257S079000, C257SE21235, C257SE33065

Reexamination Certificate

active

07927901

ABSTRACT:
A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

REFERENCES:
patent: 4999310 (1991-03-01), Kim
patent: 6583443 (2003-06-01), Chang et al.
patent: 6936860 (2005-08-01), Sung et al.
patent: 7335519 (2008-02-01), Shei et al.
patent: 2006/0121634 (2006-06-01), Ahn
patent: 2007/0153857 (2007-07-01), Chua et al.
patent: 03066181 (1991-03-01), None
patent: 2007103433 (2007-04-01), None

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