Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-05-17
1980-03-25
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, 29569L, 29576E, 331 945H, 357 16, H01L 21208
Patent
active
041949331
ABSTRACT:
Described is a method for fabricating a stripe geometry double heterostructure (DH) junction laser in which lateral current confinement is acheived by pairs of laterally spaced, reverse-biased p-n junctions. A mesa is formed on an n-GaAs substrate, for example, and a layer of p-AlGaAs is then grown by LPE so that nucleation does not occur on the top of the mesa. Laterally spaced zones of p-AlGaAs are thus formed on either side of the mesa. An n-p-p or n-n-p DH is then grown so that the interface between the p-AlGaAs layers and the first n-layer of the DH forms a pair of laterally spaced p-n junctions separated by the mesa. When the light-emitting p-n junction in the DH active region is forward biased, the air of spaced junctions are reverse biased so that pumping current is constrained to flow through the active region in a narrow channel to the mesa. Further lateral current confinement is achieved by forming on the upper DH surface a second air of reverse biased p-n junctions separated by a window in alignment with the mesa.
REFERENCES:
patent: 3780358 (1973-12-01), Thompson
patent: 3859178 (1975-01-01), Logan et al.
patent: 3865646 (1975-02-01), Logan et al.
patent: 3961996 (1976-06-01), Namizaki et al.
patent: 3978428 (1976-08-01), Burnham et al.
patent: 3983510 (1976-09-01), Hayashi et al.
patent: 3984262 (1976-10-01), Burnham et al.
patent: 4023993 (1977-05-01), Scifres et al.
patent: 4121177 (1978-10-01), Tsukada et al.
Burhman et al., Applied Physics Letters, vol. 29, No. 5, Sept. 1976, pp. 287-289.
Burham et a., IEEE J. of Quantum Electronics, No. 1, QE-11, No. 7, Jul. 1975, pp. 418-420.
Itoh et al., IEEE J. of Quantum Electronics, vol. QE-11, No. 7, Jul. 1975, pp. 421-426.
Tsukada, J. of Applied Physics, vol. 45, No. 11, Nov. 1974, pp. 4899-4906.
Logan Ralph A.
Tsang Won-Tien
Bell Telephone Laboratories Incorporated
Ozaki G.
Urbano Michael J.
LandOfFree
Method for fabricating junction lasers having lateral current co does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating junction lasers having lateral current co, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating junction lasers having lateral current co will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1400573