Method for fabricating isolation layer in semiconductor device

Details Method for fabricating isolation layer in semiconductor device Method for fabricating isolation layer in semiconductor device

2005-11-29

2005-11-29

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S425000, C438S426000, C438S427000

Reexamination Certificate

active

06969666

ABSTRACT:
A method for fabricating an isolation layer in a semiconductor device is disclosed. The method comprises the steps of: forming a pad oxide film and a pad nitride film sequentially on a semiconductor substrate defining a cell region and a peripheral region; forming a trench on the semiconductor substrate by etching the pad oxide film, the pad nitride film and the substrate; forming an oxide film of side walls on a surface of the trench; depositing an amorphous silicon film on a resultant substrate inclusive of the trench; etching the amorphous silicon film so that the trench is partly filled; depositing an insulation film on a resultant substrate so that the partly filled trench is filled completely; carrying out a CMP process of the insulation film to expose the pad nitride film; and removing the pad nitride film.

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