Method for fabricating isolation layer in semiconductor device

Details Method for fabricating isolation layer in semiconductor device Method for fabricating isolation layer in semiconductor device

2005-09-27

2005-09-27

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

Reexamination Certificate

active

06949447

ABSTRACT:
A method for fabricating an isolation layer in a semiconductor device is disclosed. The disclosed method comprises steps of: forming a trench on a semiconductor substrate; forming a flowing insulating layer within the trench; making the insulating layer precise; and forming a precise insulating layer over an upper surface of the whole structure on which the flowing insulating layer is formed. According to the method of fabricating an isolation layer in a semiconductor device, occurrence of fine pores at adjacent active regions of sidewalls in a trench can be prevented.

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