Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Patent
1997-02-20
1999-01-12
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
438146, H01L 21339
Patent
active
058588124
ABSTRACT:
A solid-state image sensor has a photodiode region, a vertical CCD register for transferring a charge received at the photodiode region, a read-out gate region for reading the charge out to the vertical CCD register, and an element isolation region for isolating the photodiode region and the vertical CCD register. Ion-implantation is carried out first for the element isolation region and, thereafter, the photodiode region and the vertical CCD register are formed. The element isolation region is in a two layer configuration having a P.sup.+ -type region and a P-type region, and the P-type region is formed simultaneously with other regions including the read-out gate region. When the P-type region for the element isolation region is formed by ion-implantation before the formation of the photodiode region and the vertical CCD register, the fine patterning of the resist mask becomes unnecessary.
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patent: 4851890 (1989-07-01), Miyatake
patent: 5288656 (1994-02-01), Kusaka et al.
N. Mutoh et al., "A 1/4 inch 380K Pixel IT-CCD Image Sensor Employing Gate-Assisted Punchthrough Read-Out Mode", IEDM 93, pp. 563-566, 1993.
Chaudhari Chandra
NEC Corporation
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