Method for fabricating integrated microelectronic assembly compr

Details Method for fabricating integrated microelectronic assembly compr Method for fabricating integrated microelectronic assembly compr

1992-05-12

1994-04-19

King, Roy

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Coating

505701, 505325, 505480, 427 62, 427 63, 427596, 257 35, 257431, 257661, B05D 506, B05D 512, H01L 3912

Patent

active

053045394

ABSTRACT:
A beam (e.g. a focused laser beam) is utilized to irradiate the entire lateral width of a limited-extent portion of an elongated superconducting thin-film lead. The irradiated portion is converted to be non-superconducting and photoconductive. The converted portion constitutes a photodetector integrated with associated superconducting leads.

REFERENCES:
patent: 4891355 (1990-01-01), Hayashi et al.
patent: 5026682 (1991-06-01), Clark et al.
patent: 5057485 (1991-10-01), Nishino et al.
Krchnavek et al, "Photoconductivity in oxygen-deficient bridge structures in superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x ", ICEM 1990: 2nd international conference on electronic materials (Newark, N.J.) Sep. 17-19, 1990 pp. 135-140.
Krchnavek et al, "Photoresponse of laser modified high-Tc superconducting thin films", SPIE vol. 1187 Processing of Films for high Tc superconducting Electronics, Oct. 1989, pp. 261-269.

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