Method for fabricating integrated circuit structures

Details Method for fabricating integrated circuit structures Method for fabricating integrated circuit structures

2011-05-10

2011-05-10

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S597000, C257SE21251

Reexamination Certificate

active

07939421

ABSTRACT:
A method for fabricating an integrated circuit structure includes the steps of forming a second dielectric layer on a substrate including a first conductive layer and a first dielectric layer, forming the second dielectric layer on the first conductive layer and the first dielectric layer, forming a hole exposing the first conductive layer in the second dielectric layer, forming a barrier layer inside the hole, and forming a second conductive layer on the barrier layer. In one embodiment of the present invention, the forming of the barrier layer comprises the steps of forming a metal layer in the hole, and performing a treating process in an atmosphere including a plasma formed from a gas including oxidant to form a metal oxide layer on the metal layer. In another embodiment of the present invention, the forming of the barrier layer comprises the steps of forming a metal nitride layer in the hole, and performing a treating process in an atmosphere including a plasma formed from a gas including oxidant to form a metal oxide layer on the metal and metal nitride layer.

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