Method for fabricating insulated gate semiconductor device

Details Method for fabricating insulated gate semiconductor device Method for fabricating insulated gate semiconductor device

1991-04-11

1993-01-12

Thomas, Tom

Fishing, trapping, and vermin destroying

437 29, 437 40, 437 50, 437160, 437164, 437228, 437233, 437235, 148DIG126, 257328, H01L 2170

Patent

active

051790343

ABSTRACT:
A method for fabricating an insulated gate semiconductor device comprises the steps of forming insulated gates on an n.sup.- -layer surface, forming p-well layers in the n.sup.- -layer using the insulated gates as masks, forming phosphosilicate glass layers on the side walls of the insulated gates and diffusing the impurities from the phosphosilicate glass layers into the p-well layers to form n.sup.30 -source layer.

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