Method for fabricating insulated gate semiconductor device

Fishing – trapping – and vermin destroying

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437 29, 437 40, 437 50, 437160, 437164, 437228, 437233, 437235, 357 234, 148DIG126, H01L 2170

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050325329

ABSTRACT:
A method for fabricating an insulated gate semiconductor device comprises the steps of forming insulated gates on an n.sup.- -layer surface, forming p-well layers in the n.sup.- -layer using the insulated gates as masks, forming phosphosilicate glass layers on the side walls of the insulated gates and diffusing the impurities from the phosphosilicate glass layers into the p-well layers to form n.sup.+ -source layer.

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B. J. Baliga et al., "Temperature Behaviour of Insulated Gate Transistor Characteristics", Solid State Electronics, vol. 28, No. 3, pp. 289-297, 1985.

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