Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1982-12-15
1984-07-17
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148175, 148188, 427 85, 427 86, H01L 21205
Patent
active
044604165
ABSTRACT:
A method of fabricating a film of in-situ doped polycrystalline silicon having a surface that is free of microscopic hillocks includes the steps of providing a deposition chamber and a wafer therein on which the film is to be fabricated and introducing one gas containing silicon atoms and another gas containing dopant atoms into said chamber with respective flow rates; wherein the respective flow rates are gradually increased in an overdamped fashion over a start-up time interval of at least one minute from zero to respective steady state values while simultaneously the ratio of the respective flow rates is kept within 25% of the ratio of said steady state values.
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Burroughs Corporation
Fassbender Charles J.
Ozaki G.
Peterson Kevin R.
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