Method for fabricating improved oxide defined transistors

Details Method for fabricating improved oxide defined transistors Method for fabricating improved oxide defined transistors

1987-02-02

1988-07-12

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 55, 437162, 437239, H01L 21385

Patent

active

047570270

ABSTRACT:
Two insulating layers may be employed to define boundaries of junctions in transistor structures useful in integrated circuit fabrication. The junctions may overlie one another, have approximately equal areas, and terminate in the insulating layers.

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