Metal treatment – Compositions – Heat treating
Patent
1980-12-22
1983-07-05
Roy, Upendra
Metal treatment
Compositions
Heat treating
29571, 29576B, 148187, 357 42, 357 59, H01L 2122, H01L 21265
Patent
active
043916503
ABSTRACT:
Disclosed is a process for a CMOS integrated circuit having polysilicon conductors of a single conductivity, single impurity type. After forming the conductors they are covered by an oxidation and diffusion mask consisting of a dual layer of silicon dioxide and silicon nitride. Then, source and drains of the p-channel and n-channel transistors are formed. Next, an implantation or diffusion barrier is grown over sources and drains. The oxidation and diffusion mask over all the conductors is then removed and they are all doped simultaneously using a single type impurity.
The process may be used to additionally form polysilicon resistors by initially doping the polysilicon to a low level of conductivity. After forming the conductors and resistors they are covered by the oxidation and diffusion mask. Then a resistor mask of either silicon nitride or polysilicon is formed over the resistors to protect them during the high conductivity doping of the conductors.
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Clemens et al., "Impurity Diffusion in SiO.sub.2 Layers and Related Effects . . . ," Electrochem. Society Extended Abstracts, vol. 74-1, p. 125, May 1974.
Pfeifer Robert F.
Trudel Murray L.
Cavender J. T.
Coca T. Rao
Dalton Philip A.
NCR Corporation
Roy Upendra
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