Method for fabricating image sensor without LTO-based...

Details Method for fabricating image sensor without LTO-based... Method for fabricating image sensor without LTO-based...

2007-11-13

2007-11-13

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C257SE31121, C257SE31124, C257SE31127

Reexamination Certificate

active

11515804

ABSTRACT:
A method for fabricating an image sensor including a first region, which is a light receiving region, and a second region, which is a pad region, includes forming a metal line in the second region over a substrate structure comprising a photodiode, forming a passivation layer over the substrate structure, selectively etching the passivation layer to form an opening exposing the metal line where a pad contact is to be formed, forming a first over coating layer (OCL1) in the first region while forming an over coating layer (OCL) plug over the opening in the second region, forming color filters, a second over coating layer (OCL2), and micro lenses in sequential order over the OCL1in the first region, forming a photoresist pattern exposing the OCL plug, performing an etch-back process to remove the OCL plug, and removing the photoresist pattern.

REFERENCES:
patent: 6344369 (2002-02-01), Huang et al.
patent: 6632700 (2003-10-01), Fan et al.
patent: 2005/0101043 (2005-05-01), Chen et al.
patent: 2005/0269656 (2005-12-01), Shian-Ching et al.
patent: 2006/0146230 (2006-07-01), Joon

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