Method for fabricating image sensor with inorganic microlens

Details Method for fabricating image sensor with inorganic microlens Method for fabricating image sensor with inorganic microlens

2007-01-23

2007-01-23

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S065000, C438S069000

Reexamination Certificate

active

10877317

ABSTRACT:
The present invention relates to a method for fabricating an inorganic microlens. The method includes the steps of: depositing an inorganic layer on a substrate; forming a hemispherical photoresist pattern on the inorganic layer; and performing a blanket etch-back process to thereby form a hemispherical inorganic microlens.

REFERENCES:
patent: 5877040 (1999-03-01), Park et al.
patent: 6163407 (2000-12-01), Okazaki et al.
patent: 6259083 (2001-07-01), Kimura
patent: 6903395 (2005-06-01), Nakai et al.
patent: 11040787 (1999-02-01), None
patent: 2000031442 (2000-01-01), None
patent: 2002076316 (2002-03-01), None
patent: 2003-051588 (2003-02-01), None

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