Method for fabricating image sensor using wafer back grinding

Details Method for fabricating image sensor using wafer back grinding Method for fabricating image sensor using wafer back grinding

2006-04-06

2008-11-11

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S057000, C438S107000, C438S188000, C257SE27046, C257SE33068

Reexamination Certificate

active

07449357

ABSTRACT:
Provided is a method for fabricating an image sensor using a wafer back grinding process. The method includes: forming a microlens protection layer over a substrate structure including a light sensing device and other associated devices; opening a pad open unit of the substrate structure using a mask; removing the mask; forming a photoresist layer over the substrate structure with the microlens protection layer; gluing a tape on the photoresist layer; performing a wafer back grinding process; and removing the tape and the photoresist layer.

REFERENCES:
patent: 2006/0011932 (2006-01-01), Kim
patent: 2006/0050379 (2006-03-01), Yee et al.
patent: 2006/0057775 (2006-03-01), Saho et al.

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