Method for fabricating image sensor

Details Method for fabricating image sensor Method for fabricating image sensor

2007-02-20

2007-02-20

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S075000, C438S259000, C438S270000, C257SE21617

Reexamination Certificate

active

11024663

ABSTRACT:
A method for fabricating an image sensor includes forming a seed layer on a semiconductor substrate, forming a blocking layer on the seed layer, partially exposing a region for transistor in an active region of the semiconductor substrate by patterning the seed layer and the blocking layer, selectively forming a gate insulating material layer in a portion of the exposed region for transistor, filling a gate electrode material layer in the exposed region for transistor over the gate insulating material layer, forming a gate insulating layer pattern and a gate electrode pattern by selectively removing the blocking layer, the gate insulating material layer, the gate electrode material layer, and the seed layer, and forming source and drain diffusion layers and a photodiode on both sides of the gate insulating layer pattern and the gate electrode pattern by selectively doping impurity ions.

REFERENCES:
patent: 2002/0090748 (2002-07-01), Lee et al.
patent: 2002/0100947 (2002-08-01), Lee et al.
patent: 2003/0113961 (2003-06-01), Horiuchi et al.
patent: 2004/0129959 (2004-07-01), Kim et al.
Wolf, Silicon Processing for the VLSI Era, 1986, Lattice Press, vol. 1, pp. 198-199.

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