Method for fabricating image sensor

Details Method for fabricating image sensor Method for fabricating image sensor

2011-08-02

2011-08-02

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S022000, C438S050000, C438S508000

Reexamination Certificate

active

07989245

ABSTRACT:
An image sensor includes a first conductivity type substrate with a trench formed in a predetermined portion thereof, a second conductivity type impurity region formed in the first conductivity type substrate below the trench and being a part of a photodiode, a second conductivity type first epitaxial layer filling the trench and being a part of the photodiode, and a first conductivity type second epitaxial layer formed over the second conductivity type first epitaxial layer.

REFERENCES:
patent: 5191399 (1993-03-01), Maegawa et al.
patent: 5731622 (1998-03-01), Sugiyama et al.
patent: 2004/0185665 (2004-09-01), Kishimoto et al.

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