Fishing – trapping – and vermin destroying
Patent
1992-12-17
1994-11-01
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 42, 437238, H01L 2102
Patent
active
053607694
ABSTRACT:
A method and system for fabricating semiconductor wafers is disclosed wherein an atomically clean, semiconductor substrate having a surface is provided in a rapid thermal processing chamber. One embodiment involves cleaning the substrate by exposing it to a first gas at a temperature substantially within the range of 850.degree. C. to 1250.degree. C. for approximately 10 to 60 seconds. Subsequently, a coating having a first thickness is formed superjacent the substrate surface by introducing a second gas at a temperature substantially within the range of 850.degree. C. to 1250.degree. C. for approximately 5 to 30 seconds in the chamber. The resultant coating, depending on the gas selected, comprises either SiO.sub.2 or Si-F.
Subsequently, the substrate having the coating is exposed to a third gas at a temperature substantially within the range of 900.degree. C. to 1050.degree. C. for approximately 30 minutes to one hour, thereby forming a silicon dioxide layer. The silicon dioxide layer is disposed superjacent the substrate and subjacent the coating. In one embodiment of the invention, this step is performed in a furnace. In an alternate embodiment of the present invention, a transferring device, such as a robot, is employed, using a load lock, to transfer the substrate between the RTP chamber and the furnace without exposing the substrate to atmospheric pressure.
REFERENCES:
patent: 4851370 (1989-07-01), Doklan et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5089442 (1992-02-01), Olmer
patent: 5229334 (1993-07-01), Kato
patent: 5264396 (1993-11-01), Thakur et al.
Kauffman Ralph E.
Martin Annette L.
Thakur Randhir P. S.
Chaudhuri Olik
Everhart C.
Micron Semiconductor Inc.
Pappas Lia M.
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