Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2011-07-12
2011-07-12
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S906000, C257SE21230, C414S935000
Reexamination Certificate
active
07977241
ABSTRACT:
A method of fabricating highly reliable tungsten interconnects takes into consideration the effects of charging that can occur within a CMP apparatus due to unrestricted DI water flow, limited only by house supply. Such effects are addressed with the use of a variable pressure input constant flow output in-line controller to the DI water line coupled to the head cleaning loading and unloading module of the CMP apparatus.
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Bellamak William J.
Davison Daniel
Gutierrez Edward R.
Hale Gregory D.
Vannell James F.
Choi Calvin
Freescale Semiconductor Inc.
Mulpuri Savitri
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