Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2008-03-26
2010-11-09
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S022000, C257SE21535
Reexamination Certificate
active
07829359
ABSTRACT:
One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.
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Jiang Fengyi
Tang Yingwen
Wang Li
Ghyka Alexander G
Lattice Power (Jiangxi) Corporation
Park Vaughan Fleming & Dowler LLP
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