Method for fabricating highly reflective ohmic contact in...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S022000, C257SE21535

Reexamination Certificate

active

07829359

ABSTRACT:
One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer.

REFERENCES:
patent: 6936863 (2005-08-01), Udagawa et al.
patent: 2001/0042866 (2001-11-01), Coman
patent: 2006/0035398 (2006-02-01), Ying
patent: 2008/0230799 (2008-09-01), Wang et al.
patent: 2009/0194784 (2009-08-01), Kaji et al.
patent: 2009/0242897 (2009-10-01), Bergmann et al.
patent: 2009/0275154 (2009-11-01), Suzuki et al.

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