Method for fabricating high-quality semiconductor...

Details Method for fabricating high-quality semiconductor... Method for fabricating high-quality semiconductor...

2011-03-08

2011-03-08

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C438S046000

Reexamination Certificate

active

07902556

ABSTRACT:
One embodiment of the present invention provides a semiconductor light-emitting device which includes: (1) a silicon (Si) substrate; (2) a silver (Ag) transition layer which is formed on a surface of the Si substrate, wherein the Ag transition layer covers the Si substrate surface; and (3) an InGaAlN, ZnMgCdO, or ZnBeCdO-based semiconductor light-emitting structure which is fabricated on the Ag-coated Si substrate. Note that the Ag transition layer prevents the Si substrate surface from forming an amorphous overcoat with reactant gases used for growing the semiconductor light-emitting structure.

REFERENCES:
patent: 2004/0104395 (2004-06-01), Hagimoto et al.

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