Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2008-03-25
2011-10-25
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S081000, C257S094000, C257S099000, C257SE33026
Reexamination Certificate
active
08044416
ABSTRACT:
One embodiment of the present invention provides a method for fabricating a high-power light-emitting diode (LED). The method includes etching grooves on a growth substrate, thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride (InGaAlN)-based LED multilayer structures on the mesas on the growth substrate, wherein a respective mesa supports a separate LED structure. In addition, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves. Moreover, the method includes creating conductive paths which couple a predetermined number of adjacent individual LEDs, thereby allowing the LEDs to share a common power supply and be powered simultaneously to form a high-power LED array.
REFERENCES:
patent: 4864216 (1989-09-01), Kalata et al.
patent: 2002/0123164 (2002-09-01), Slater, Jr.
patent: 2009/0134420 (2009-05-01), Nagai
Jiang Fengyi
Liu Junlin
Tang Yingwen
Wang Li
Lattice Power (Jiangxi) Corporation
Park Vaughan Fleming & Dowler LLP
Pham Long
Yao Shun
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