Method for fabricating heterojunction bipolar transistor

Details Method for fabricating heterojunction bipolar transistor Method for fabricating heterojunction bipolar transistor

1996-10-15

1998-08-25

Niebling, John

Fishing, trapping, and vermin destroying

437 67, 437131, 437132, 148DIG50, 148DIG72, H01L 21265

Patent

active

057982775

ABSTRACT:
An improved method for fabricating a heterojunction bipolar transistor which includes the steps of forming a buried collector, a collector thin film, and a collector sinker on a semiconductor substrate in order, forming a first silicon oxide film, a base electrode polysilicon layer, a nitride film, and an oxidation film on a resulting substrate exposing the first silicon oxidation film, forming a spacer insulation film at the lateral side of the exposed region, and defining an activation region, exposing the collector thin film of the activation region using a mask, and forming an auxiliary lateral film for an isolation of the device, forming a selective collector region by ion-implantating a dopant to the activation region which is limited by the auxiliary lateral film, removing the auxiliary lateral film, etching the exposed portion in an anisotropic etching method, and forming a shallow trench for a device isolation, forming a polysilicon lateral film to have a height which is the same as the height of the base electrode polysilicon layer on the shallow trench, and forming a self-aligned base.

REFERENCES:
patent: 4980305 (1990-12-01), Kadota et al.
patent: 5039624 (1991-08-01), Kadota
patent: 5496745 (1996-03-01), Ryum et al.

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