Method for fabricating giant magnetoresistive (GMR) devices

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C029S603070, C029S603130, C029S603140, C029S603160, C029S603180, C216S022000, C216S048000, C216S065000, C360S316000, C360S324110, C360S324120, C360S324200, C427S127000, C427S128000, C451S005000, C451S041000

Reexamination Certificate

active

07114240

ABSTRACT:
In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.

REFERENCES:
patent: 5496759 (1996-03-01), Yue et al.
patent: 5569617 (1996-10-01), Yeh et al.
patent: 5861328 (1999-01-01), Tehrani et al.
patent: 5940319 (1999-08-01), Durlam et al.
patent: 6048739 (2000-04-01), Hurst et al.
patent: 6153443 (2000-11-01), Durlam et al.
patent: 6165803 (2000-12-01), Chen et al.
patent: 6174737 (2001-01-01), Durlam et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6392922 (2002-05-01), Liu et al.
patent: 6500676 (2002-12-01), Ramberg
patent: 6872997 (2005-03-01), Liu et al.
patent: 2002/0080645 (2002-06-01), Liu et al.
patent: 2002/0085412 (2002-07-01), Liu et al.
patent: 1 033 764 (2000-03-01), None
“Dual layer overcoat for MR recording media”; Ga-Lane Chen; Junhoa Wu; Weiss, J.; Magnetics, IEEE Transactions on vol. 35, Issue 5, Part 1; Sep. 1999; pp. 2364-2366.
Geppert, “The New Indelible Memories,” IEEE Spectrum Mar. 2003.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fabricating giant magnetoresistive (GMR) devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating giant magnetoresistive (GMR) devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating giant magnetoresistive (GMR) devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3710978

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.