Method for fabricating gate oxide layers of different thicknesse

Details Method for fabricating gate oxide layers of different thicknesse Method for fabricating gate oxide layers of different thicknesse

1995-02-16

1996-03-26

Fourson, George

Fishing, trapping, and vermin destroying

437979, 437983, 437 56, H01L 2102

Patent

active

055020097

ABSTRACT:
A method for fabricating gate oxide layers of different thicknesses on a silicon substrate. A field oxide layer is formed on a predetermined portion of the silicon substrate to define first active regions and second active regions. A first gate oxide layer is formed over the first and second active regions. A barrier layer is formed to cover a portion of the first gate oxide layer within the first active regions. The portion of the first gate oxide layer within the second active regions is then removed utilizing the barrier layer as masking. A second gate oxide layer is then formed over the second active regions.

REFERENCES:
patent: 4859619 (1989-08-01), Wu et al.
patent: 5254489 (1993-10-01), Nakata

Affiliated with

Also associated with

Rating

Method for fabricating gate oxide layers of different thicknesse does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating gate oxide layers of different thicknesse, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating gate oxide layers of different thicknesse will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-915468