Method for fabricating gallium nitride based semiconductor...

Details Method for fabricating gallium nitride based semiconductor... Method for fabricating gallium nitride based semiconductor...

2011-08-16

2011-08-16

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE33025

Reexamination Certificate

active

07998836

ABSTRACT:
A method of fabricating a gallium nitride-based semiconductor electronic device is provided, the method preventing a reduction in adhesiveness between a gallium nitride-based semiconductor layer and a conductive substrate. A substrate11is prepared. The substrate11has a first surface11aand a second surface11b, the first surface11aallowing a gallium nitride-based semiconductor to be deposited thereon. The substrate11includes a support13of a material different from the gallium nitride-based semiconductor. The support is exposed on the second surface11bof the substrate11. An array of grooves15is provided in the second surface11b. A semiconductor region including at least one gallium nitride-based semiconductor layer is deposited on the first surface11aof the substrate11, and thereby an epitaxial substrate E is fabricated. A conductive substrate33is bonded to the epitaxial substrate E such that the semiconductor region17is provided between the first surface11aof the substrate11and the conductive substrate E. Subsequently, the second surface11bis irradiated with laser light for laser lift-off.

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