Method for fabricating flash memory device

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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C438S253000, C438S665000

Reexamination Certificate

active

07132345

ABSTRACT:
A flash memory device fabrication method is disclosed. A disclosed method comprises: depositing a first oxide layer on a substrate; depositing a first polysilicon layer on the first oxide layer; forming a second oxide layer on the entire surface of the first polysilicon layer; removing the second oxide layer; making the first polysilicon layer with an embossed shape by performing a heat treatment; depositing a dielectric layer on the top of the first polysilicon layer; depositing a second polysilicon layer on the entire surface of the dielectric layer; and removing some parts of the dielectric layer and the second polysilicon layer through a patterning process and an etching process.

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patent: WO 02/45175 (2002-06-01), None
Peter Rabkin, Hsingya Arthur Wang and Kai-Chang Chou; Floating Gate Having Uneven Surface, Nonvolatile Memory Cell Having Control Gate and Its Manufacturing Method; Patent Abstracts of Japan; Publication No. 2003-142612; May 16, 2003; Japan Patent Office, Japan.

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