Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-11-07
2006-11-07
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S253000, C438S665000
Reexamination Certificate
active
07132345
ABSTRACT:
A flash memory device fabrication method is disclosed. A disclosed method comprises: depositing a first oxide layer on a substrate; depositing a first polysilicon layer on the first oxide layer; forming a second oxide layer on the entire surface of the first polysilicon layer; removing the second oxide layer; making the first polysilicon layer with an embossed shape by performing a heat treatment; depositing a dielectric layer on the top of the first polysilicon layer; depositing a second polysilicon layer on the entire surface of the dielectric layer; and removing some parts of the dielectric layer and the second polysilicon layer through a patterning process and an etching process.
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Peter Rabkin, Hsingya Arthur Wang and Kai-Chang Chou; Floating Gate Having Uneven Surface, Nonvolatile Memory Cell Having Control Gate and Its Manufacturing Method; Patent Abstracts of Japan; Publication No. 2003-142612; May 16, 2003; Japan Patent Office, Japan.
Dang Phuc T.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
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