Method for fabricating fine pattern in semiconductor device

Details Method for fabricating fine pattern in semiconductor device Method for fabricating fine pattern in semiconductor device

2011-01-11

2011-01-11

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S780000, C438S783000, C438S798000, C438S924000, C257SE21027, C257SE21249, C257SE21257, C257SE21259

Reexamination Certificate

active

07867913

ABSTRACT:
A method for fabricating a fine pattern in a semiconductor device includes forming a first photoresist over a substrate where an etch target layer is formed, doping at least one impurity selected from group III elements and group V elements, of the periodic table, into the first photoresist, forming a photoresist pattern over the first photoresist, performing a dry etching process using the photoresist pattern to expose the first photoresist, etching the first photoresist by an oxygen-based dry etching to form a first photoresist pattern where a doped region is oxidized, and etching the etch target layer using the first photoresist pattern as an etch barrier.

REFERENCES:
patent: 6271154 (2001-08-01), Shen et al.
patent: 6864144 (2005-03-01), Kenyon et al.
patent: 2003/0111098 (2003-06-01), Kim
patent: 59-154377 (1986-02-01), None
patent: 09-164704 (1998-03-01), None
patent: 1998-060617 (1998-10-01), None
patent: 10-1999-0055782 (1999-07-01), None
patent: 10-2002-0039956 (2002-05-01), None
patent: 10-0653534 (2006-11-01), None
Office Action dated Jun. 11, 2010, for Korean application No. 10-2008-0094723.

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