Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-05-29
2007-05-29
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S725000, C438S758000, C438S761000
Reexamination Certificate
active
11251525
ABSTRACT:
A method and system for masking a surface to be etched is described. The method includes the operation of heating a phase-change masking material and using a droplet source to eject droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze after upon contact with the thin-film or substrate surface. The thin-film or substrate is then treated to alter the surface characteristics, typically by depositing a self assembled monolayer on the surface. After deposition, the masking material is removed. A material of interest is then deposited over the substrate such that the material adheres only to regions not originally covered by the mask such that the mask acts as a negative resist. Using such techniques, feature sizes of devices smaller than the smallest droplet printed may be fabricated.
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Chabinyc Michael L.
Ready Steven E.
Salleo Alberto
White Stephen D.
Wong William S.
Chen Kent
Chen Kin-Chan
Palo Alto Research Center Incorporated
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