Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-12-06
2005-12-06
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S719000, C438S763000
Reexamination Certificate
active
06972261
ABSTRACT:
A method and system for masking a surface to be etched is described. The method includes the operation of heating a phase-change masking material and using a droplet source to eject droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze after upon contact with the thin-film or substrate surface. The thin-film or substrate is then treated to alter the surface characteristics, typically by depositing a self assembled monolayer on the surface. After deposition, the masking material is removed. A material of interest is then deposited over the substrate such that the material adheres only to regions not originally covered by the mask such that the mask acts as a negative resist. Using such techniques, feature sizes of devices smaller than the smallest droplet printed may be fabricated.
REFERENCES:
patent: 5695658 (1997-12-01), Alwan
patent: 5843847 (1998-12-01), Pu et al.
patent: 5882538 (1999-03-01), Martin et al.
patent: 6337222 (2002-01-01), Shimoda et al.
patent: 6436229 (2002-08-01), Tai et al.
patent: 6503831 (2003-01-01), Speakman
Gleskova, et al., “Electrophotographically Patterned Thin-Film Silicon Transistors”,IEEE Electron Device Letters, vol. 17, No. 6, Jun. 1996, pp. 264-266.
Gleskova, et al., “Photoresist-free Fabrication Process for a-Si:H Thin Film Transistors”,Journal of Non-Crystalline Solids,227-230 (1998), pp. 1217-1220.
Gleskova, et al., “a-Si:H TFT Fabricated by Electrophotographic Printing”, in 1996 Display Manufacturing Technology Conference. Digest of Technical Papers. First Edition.Proceedings of 3rd Annual Display Manufacturing Technology Conference,San Jose, CA, USA, Feb. 6-8, 1996. p. 97-8.
MA et al., “Amorphous Silicon Transistors on Ultrathin Steel Foil Substrates”,Materials Research Society,Symposium Proceedings vol. 507, 1998, pp. 13-18.
Sirringhous, et al., “High Resolution Printing of All Polymer Transistor Circuits”Science,vol. 290, Dec. 2000, pp. 2123-2126.
H. Gleskova, E.Y. MA, S. Wagner, D.S. Shen, a-Si:H TFT fabricated by electrophotographic printing, Digest of Technical Papers, First Edition, Proceedings of 3rd Annual Display Manufacturing Technology Conference, San Jose, CA, Feb. 6-8, 1996. p. 97-98.
H. Gleskova, S. Wagner, D.S. Shen Photoresist-free fabrication process for a-Si:H thin film transistors, Journal of Non-Crystalline Solids 227-230 (1988) 1217-1220.
J. Z. Wang, Z. H. Zheng, H.W. Li, W.T.S. Huck and H. Sirringhaus Dewetting of conducting polymer inkjet droplets on patterned surfaces, Nature Materials, vol. 3, Mar. 2004 pp. 171-176.
Gokhan Percin, Thomas S. Lundgren, Butrus T. Khuri-Yakub Controlled ink-jet printing and deposition of organic polymers and solid particles, American Institute of Physics, Applied Physics Letters, vol. 73, No. 16, Oct., 1998, pp. 2375-2377.
E.Y. Ma, S. Wagner a-Si:H Thin Film Transistors on aRollable 2-μthick steel foil, Mat. Res. Soc. Symp. Proc. vol. 507, 1998 Materials Research Society, pp. 13-18,
H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, E. P. Woo High-Resolution Inkjet Printing of All-Polymer Transistor Circuits, Science Magazine, vol. 290, Dec. 15, 2000, pp. 2123-2126.
Zhenan Bao, Yi Feng, Ananth Dodabalapur, V. R. Raju, Andrew J. Lovinger High Performance Plastic Transistors Fabricated by Printing Techniques, American Chemical Society, Chem. Mater. 1997, 9, pp. 1299-1301.
Shun-Chi Chang, Jayesh Bharathan, Yang Yang, Roger Helgeson, Fred Wudl, Michael B. Ramey, John R. Reynolds Dual-color polymer light-emitting pixels processed by hybrid inkjet printing, American institute of Physics, Applied Physics Letters, vol. 73, no. 18, Nov., 1998, pp. 2561-2563.
H. Gleskova, S. Wagner, D. S. Shen Electrophotographic Patterning of Thin-Film Silicon on Glass Foil, IEEE Electron Device Letters, vol. 16, No. 10, Oct. 1995, pp. 418-420.
H. Gleskova, R. Konenkamp, S. Wagner, D. S. Shen Electrophotographically Patterned Thin-Film Silicon Transistors, IEEE Electron Device Letters, vol. 17, No. 6, Jun. 1996, pp. 264-266.
Masakazu Sanada, Kayoko Nakano, Minobu Matsunaga Characteristics of material for Photoresist Spin Coating: Property for Reduction of photoresist Consumption, 1998 Publication Board, Japanese Journal of Applied Physics, vol. 37, pp. L144-L1451.
Chebinyc Michael L.
Ready Steven E.
Salleo Alberto
White Stephen D.
Wong William S.
Chen Kent
Chen Kin-Chan
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