Method for fabricating field emission display cathode

Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly

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445 50, H01J 902

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active

060424443

ABSTRACT:
A method for fabricating a cathode of a field emission display. A doped polysilicon layer is formed over a substrate, and the doped polysilicon layer is patterned to form a plurality of field emitters. The doped polysilicon layer and the field emitters are patterned to form a plurality of field emission arrays. Then, a sharpening process is performed to form an oxide layer on the field emitters. A first dielectric layer and a second dielectric layer are formed conformal to the substrate, and a third dielectric layer is formed on the second dielectric layer. The third dielectric layer is planarized to expose the second dielectric layer on a top portion of each of the field emitters. The exposed second dielectric layer is removed, and an oxide layer is formed on the third dielectric layer and a top surface of the first dielectric layer on the top portion of the field emitter. A self-aligned metal layer is formed on the oxide layer. A portion of the self-aligned metal layer is removed to expose the oxide layer on the top portion of the field emitter, and gates are formed on the third dielectric layer. The exposed oxide layer and the first dielectric layer on the top portion of the field emitter are removed.

REFERENCES:
patent: 5277638 (1994-01-01), Lee
patent: 5827100 (1998-10-01), Kim
patent: 5953580 (1999-09-01), Kang et al.
patent: 5964629 (1999-10-01), Park et al.

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