Method for fabricating field emission device metallization

Details Method for fabricating field emission device metallization Method for fabricating field emission device metallization

1995-04-19

1997-02-11

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

H01J 902

Patent

active

056014660

ABSTRACT:
Methods of fabricating an emitter plate 10 having titanium tungsten (Ti:W) and aluminum (Al) used in a sublayering arrangement as the metallization material for the gate electrodes 60, cathode electrodes 20, bond pads 80 and 130, lead interconnects 100, 101, 120 and 121, and integrated circuit (IC) mount pads 90 and 91. In a disclosed embodiment, titanium tungsten and aluminum sublayers are combined with niobium to provide the metallization material.

REFERENCES:
patent: 3755704 (1973-08-01), Spindt et al.
patent: 4850919 (1989-07-01), DiSanto et al.
patent: 4857161 (1989-08-01), Borel et al.
patent: 4857799 (1989-08-01), Spindt et al.
patent: 4940916 (1990-07-01), Borel et al.
patent: 5153754 (1992-10-01), Whetten
patent: 5194780 (1993-03-01), Meyer
patent: 5200360 (1993-04-01), Bradbury et al.
patent: 5225820 (1993-07-01), Clerc
patent: 5312514 (1994-05-01), Kumar
patent: 5507676 (1996-04-01), Taylor et al.

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