Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-02-09
1978-02-21
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29571, 29578, 148 15, 156652, 156653, 156657, 357 23, 357 41, 357 51, 357 59, 427 86, 427 88, 427 93, H01L 2122, H01L 2131, H01L 2978
Patent
active
040750450
ABSTRACT:
Fabricating an integrated circuit array of FET one-device memory cells which includes providing a semiconductive substrate of a first conductive type; delineating field insulation regions; delineating polycrystalline silicon gate regions employing an oxidation barrier masking layer; introducing active impurities of a second and opposite conductive type into predetermined regions of the substrate to provide doped bit lines (FET drains), connection regions (FET sources), and lower conductive electrodes of the storage capacitors; next delineating upper polycrystalline silicon electrodes of the storage capacitors; growing silicon dioxide insulation over all portions of the structure except over the FET gate regions which are protected by the oxidation barrier masking layer; removing the oxidation barrier masking layer over the FET gates with an etchant; delineating contact holes to polycrystalline silicon capacitor electrodes and to FET sources and drains in circuits peripheral to the array of memory cells; and delineating the metallic-type high-conductivity electrical interconnection word line pattern. This fabrication procedure requires five basic lithographic (pattern delineating) masking steps. A high electrical conductivity word line is electrically connected to the gate of the FET by means of a "self-registering" metallic line to polysilicon gate contact. This gate contacting technique is relatively more tolerant to misregistration between the FET gate lithographic pattern and the metallic interconnection line lithographic pattern than are previously known fabrication methods.
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patent: 3811076 (1974-05-01), Smith
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patent: 3897282 (1975-07-01), White
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patent: 3958323 (1976-05-01), De la Moneda
Rideout, V.L., "Masking for --Metal-to-Polysilicon Contacts" I.B.M. Tech. Discl. Bull., vol. 17, No. 9, Feb. 1975, pp. 2802-2804.
International Business Machines - Corporation
Rutledge L. Dewayne
Saba W. G.
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