Method for fabricating ferroelectric thin film

Details Method for fabricating ferroelectric thin film Method for fabricating ferroelectric thin film

1996-05-08

1998-10-13

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of coating supply or source outside of primary...

427596, 427597, 4272553, 427 79, 4271263, 427226, 427240, 427299, 20419218, 20419226, 2041922, C23C 1434

Patent

active

058209468

ABSTRACT:
A PZT ferroelectric thin film is sputter deposited on an electrode without microcracks while avoiding oxygen and Pb ion deficiencies at the electrode interface by initially forming a buffer layer containing a sufficient amount of a volatile Pb component and a sufficient amount of oxygen to easily absorb the energy of sputter particles. The PZT ferroelectric thin film can also be deposited by laser ablation.

REFERENCES:
patent: 4731172 (1988-03-01), Adachi et al.
patent: 5155573 (1992-10-01), Abe et al.
patent: 5397446 (1995-03-01), Ishihara et al.
patent: 5478610 (1995-12-01), Desu et al.
patent: 5534071 (1996-07-01), Varshney et al.

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