Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-07-19
2005-07-19
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S190000, C438S238000, C438S240000, C438S250000, C438S643000, C257S295000, C257S310000
Reexamination Certificate
active
06919212
ABSTRACT:
The present invention relates to a method for fabricating a ferroelectric random access memory (FeRAM) device. The method includes the steps of: forming a first inter-layer insulation layer on a substrate; forming a storage node contact connected with a partial portion of the substrate by passing through the first inter-layer insulation layer; forming a lower electrode connected to the storage node contact on the first inter-layer insulation layer; forming a second inter-layer insulation layer having a surface level lower than that of the lower electrode so that the second inter-layer insulation layer encompasses a bottom part of the lower electrode; forming an impurity diffusion barrier layer encompassing an upper part of the lower electrode on the second inter-layer insulation layer; forming a ferroelectric layer on the lower electrode and the impurity diffusion barrier layer; and forming a top electrode on the ferroelectric layer.
REFERENCES:
patent: 6200821 (2001-03-01), Baek
patent: 6291292 (2001-09-01), Yang
patent: 6355952 (2002-03-01), Yamoto et al.
patent: 6407422 (2002-06-01), Asano et al.
patent: 6603161 (2003-08-01), Kanaya et al.
patent: 6645779 (2003-11-01), Hong
patent: 6713808 (2004-03-01), Wang et al.
patent: 2001/0013614 (2001-08-01), Joshi et al.
patent: 2002/0056862 (2002-05-01), Miki et al.
patent: 2004/0072442 (2004-04-01), Celii et al.
patent: 2004/0101977 (2004-05-01), Celinska et al.
patent: 2004/0113186 (2004-06-01), Karasawa et al.
Bang Kyu-Hyun
Hong Suk-Kyoung
Jang In-Woo
Kim Jin-Gu
Lee Kye-Nam
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Keshavan B V.
Smith Matthew
LandOfFree
Method for fabricating ferroelectric random access memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating ferroelectric random access memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating ferroelectric random access memory... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3379101