Method for fabricating ferroelectric capacitor of nonvolatile se

Details Method for fabricating ferroelectric capacitor of nonvolatile se Method for fabricating ferroelectric capacitor of nonvolatile se

1999-10-28

2000-05-16

Nelms, David

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438 3, H01L 2100

Patent

active

060636394

ABSTRACT:
A method for fabricating a ferroelectric capacitor of nonvolatile semiconductor memory device includes the steps of forming an amorphous layer on a resulting structure after performing a specific process, forming perovskite nuclei within the amorphous layer by an oxidation reaction in plasma atmosphere and performing a thermal process for growing the grains to form a ferroelectric thin film. The perovskite nuclei are formed at a low temperature, so that the ferroelectric capacitor has improved properties such as high density, high polarization and low leakage current.

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