Method for fabricating extreme ultraviolet lithography mask

Details Method for fabricating extreme ultraviolet lithography mask Method for fabricating extreme ultraviolet lithography mask

2011-07-12

2011-07-12

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000, C430S394000

Reexamination Certificate

active

07977016

ABSTRACT:
A method for fabricating an extreme ultraviolet (EUV) lithography mask comprises forming a reflecting layer, an absorber layer, and a resist layer over a substrate; defining a plurality of split regions by partially splitting the resist layer with regular spacing; performing an exposure process, wherein the exposure region is irradiated with an electron beam at different intensities on the split regions to generate a difference in electron beam doses implanted into the resist layer; forming a resist layer pattern which selectively exposes the absorber layer and has a slanted side wall profile by performing a development process to remove a portion of the resist layer, into which the electron beam doses are implanted; and forming an absorber layer pattern with a slanted side wall profile by sequentially etching the portion of the absorber layer exposed by the resist layer pattern.

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Lu et al., “Determining Relationship Between Electron-Beam Dose and Etching Depth by Empirical Formula of Contrast,”High Power Laser and Particle Beams, 19(8):1377-1380 (2008).

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