Method for fabricating EUVL mask

Details Method for fabricating EUVL mask Method for fabricating EUVL mask

2011-04-19

2011-04-19

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07927769

ABSTRACT:
A method for fabricating an extreme ultraviolet lithography (EUVL) mask. In an etching step, at least a part of an absorption layer of an EUVL mask is etched by allowing a charged particle to irradiate the absorption layer under feed of a halogenated xenon gas. In an oxidant feed step, an oxidant is fed to the absorption layer after the etching step to form an oxidized layer at a side surface of the absorption layer that is not etched during the etching step.

REFERENCES:
patent: 6440615 (2002-08-01), Shimizu

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