Method for fabricating electronic device

Details Method for fabricating electronic device Method for fabricating electronic device

2006-04-04

2006-04-04

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S637000, C438S706000, C438S798000

Reexamination Certificate

active

07022619

ABSTRACT:
After a hole is formed in a low dielectric constant film on a substrate, a protective film is formed on the wall surface of the hole or an electron acceptor is caused to be adsorbed by or implanted in the low dielectric constant film exposed at the wall surface of the hole. Otherwise, resist residue is left on the wall surface of the hole. Then, a resist pattern having an opening corresponding to a wire formation region including a region formed with the hole is formed by using a chemically amplified resist.

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