Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1997-09-18
1999-02-16
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438254, 438398, 257306, H01L 2170, H01L 218242
Patent
active
058720413
ABSTRACT:
A method for fabricating electrodes of a capacitor over a semiconductor substrate is disclosed. The method includes the steps of: forming a base insulating layer over the semiconductor substrate; forming a stacked layer, including an insulating layer and a mask layer, over the base insulating layer; defining the stacked layer to form an opening to the base insulating layer; forming a first conducting layer over the stacked layer; forming a spacer on the sidewall of the first conducting layer in the opening; etching the bottom of the opening by using the mask layer and the spacer as a mask to expose a portion of the semiconductor substrate; forming a second conducting layer in the opening to electrically connect the exposed semiconductor substrate; and removing the spacer to leave the first and the second conducting layers as a capacitor electrode.
REFERENCES:
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5604146 (1997-02-01), Tseng
Toru Kaga et al., Crown-Shaped Stacked-Capacitor Cell for 1.5V Operation 64-Mb DRAM's, IEEE, Transactions on Electron Devices, vol., 38, No. 2, Feb. 1991.
Lee Ta-Yuan
Lin Chi-Hui
Bednarek Michael D.
Chaudhuri Olik
Coleman William David
Nan Ya Technology Corp.
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