Method for fabricating electrode structure for a semiconductor d

Details Method for fabricating electrode structure for a semiconductor d Method for fabricating electrode structure for a semiconductor d

1974-08-29

1976-02-17

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

357 71, C25D 502, H01L 2348

Patent

active

039390470

ABSTRACT:
A thermally stable semiconductor device is disclosed in which a thin aluminum film is formed over a silicon oxide film selectively formed on the silicon substrate. A layer of a metal such as tantalum, tungsten, or molybdenum that does not enter into an alloy reaction with silicon at heat treatment temperatures is formed over the thin aluminum film and is covered with a thick aluminum film. Oxides of the upper thick aluminum layer as well as oxides of the non-alloying metal and the lower aluminum layer are selectively formed in alignment with one another at locations where the electrodes are not formed.

REFERENCES:
patent: 3442701 (1969-05-01), Lepselter
patent: 3634203 (1972-01-01), McMahon
patent: 3663279 (1972-05-01), Lepselter
patent: 3672984 (1972-06-01), Sato et al.
patent: 3741880 (1973-06-01), Shiba et al.
patent: 3798135 (1974-03-01), Bracken et al.
patent: 3827949 (1974-08-01), Platter et al.

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