Method for fabricating dynamic random access memory capacitor

Details Method for fabricating dynamic random access memory capacitor Method for fabricating dynamic random access memory capacitor

1994-08-29

1996-01-09

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 52, 437919, 437 47, 148DIG14, H01L 218242

Patent

active

054828864

ABSTRACT:
A method for fabricating a DRAM capacitor, including the steps of forming a double contact hole structure by utilizing an insulating spacer two times, filling only the lower portion of the contact hole, forming a pattern having an undercut portion from two insulating films exhibiting a superior wet etch rate difference, coating a conduction layer over the pattern to form an insulating spacer from a portion of the conduction layer disposed on the stepped pattern portion, and etching the resulting structure at its full surface using the insulating spacer as a mask to isolate a capacitor to be finally formed, whereby a capacitor electrode having a double rectangular frame shape is formed. With such a structure, the inner area of the contact hole can be used as a part of the capacitor, thereby enabling the surface area of capacitor to be increased. Since no separate mask is used for the etching step, it is possible to simplify the fabrication of DRAM capacitor. Furthermore, the fabricated DRAM capacitor has a reduced contact area and an increased surface area. This achieves an increase in capacitance and improvement in integration degree while reducing the topology.

REFERENCES:
patent: 5326714 (1994-07-01), Liu et al.
patent: 5374577 (1994-12-01), Tuan
patent: 5389560 (1995-02-01), Park
patent: 5389566 (1995-02-01), Lage

Affiliated with

Also associated with

Rating

Method for fabricating dynamic random access memory capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating dynamic random access memory capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating dynamic random access memory capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1302834