Method for fabricating dual damascene structures using...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S750000, C257S760000, C257S774000, C257S776000, C257SE23145, C428S044000, C428S201000, C430S313000, C430S314000, C430S317000, C430S323000, C438S046000, C438S618000, C438S700000, C264S338000, C264S480000, C264S494000

Reexamination Certificate

active

07982312

ABSTRACT:
The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.

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