Method for fabricating diodes for electrostatic discharge protec

Fishing – trapping – and vermin destroying

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437 57, 437 59, 437904, 257355, 257356, 257357, H01L 21265

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active

052720977

ABSTRACT:
A novel process is taught for forming diodes simultaneously with the formation of typical prior art LDD MOS devices. The diodes thus formed have low breakdown voltages, making them suitable for use as voltage reference diodes, or diodes for ESD protection.

REFERENCES:
patent: 3667009 (1972-05-01), Rugg
patent: 3787717 (1974-01-01), Fischer et al.
patent: 4366522 (1982-12-01), Baker
patent: 4400711 (1983-08-01), Avery
patent: 4712152 (1987-12-01), Iio
patent: 4763184 (1988-08-01), Krieger et al.
patent: 4806999 (1989-02-01), Strauss
patent: 4875130 (1989-10-01), Huard
patent: 4916085 (1990-04-01), Frisina
patent: 4937645 (1990-06-01), Ootsuka et al.
patent: 5081514 (1992-01-01), Ueoka
patent: 5144518 (1992-09-01), Miyazaki
patent: 5182220 (1993-01-01), Ker et al.
patent: 5182621 (1993-01-01), Hinooka
Internal Chip ESD Phenomena Beyond the Protection Circuit in IEEE/IRPS 1988 pp. 19-25.
New ESD Protection Concept for VLSI CMOS Circuits Avoiding Circuit Stress 1991 EOS ESD Symposium Proceedings, pp. 74-82.

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